Used in anti-radiation and high pressure high temperature technology

Boron nitride is an excellent, great development potential and broad application prospects of new broadband semiconductor materials. Its crystal structure There are two main forms: sp ~ 2 hybrid structure of hexagonal boron nitride and sp ~ 3 hybrid structure of cubic boron nitride. Hexagonal boron nitride and graphite similar, with good lubricity, thermal conductivity and thermal stability, and is a very good electrical insulating materials. Very suitable for anti-radiation and high pressure high temperature technology. H-BN has been reported that also has high acoustic  polycrystalline diamond and excellent light transmission surface acoustic wave device as a suitable material for the substrate. Cubic boron nitride has a  synthetic diamond powder  (second only to diamond), a small friction coefficient, good thermal conductivity, excellent chemical stability and high temperature oxidation resistance. The c-BN can be used as an ideal tool coating hard. c-BN film also has excellent electrical properties, such as good insulation, wide band gap, as well as the recent discovery of field electron emission characteristics, so that in high temperature, high-power electronic devices, field emission flat panel displays and other new electronic device field has broad application prospects.