Larger band gap, high working temperature

Cubic boron nitride is a synthetic wide band gap semiconductor material, the band gap of 6.4eV, cutoff wavelength of 193nm, suitable for DUV-blind detection. And other materials for UV detection compared with the following advantages: greater band gap, high working temperature; dielectric constant is small, parasitic capacitance, the device fast response; corrosion resistance, high-energy particle radiation, more suitable work in harsh environments; and material breakdown voltage. In addition,  Abrasive grinding wheel  current ultraviolet detector mechanism and structure of the work that the MSM photovoltaic and photoconductive structure type, PN junction, PIN junction compared to advantage. It is the dark current, short response time,  cubic boron nitride , structure process is relatively simple, the material requirements are not demanding. This thesis MSM coplanar electrode structure, by evaporation, photolithography, such peeling of the structure of the sample production process, and the substrate material used in accordance with, the electrode structure produced a variety of different samples, including a glass substrate is substrate as a substrate in a simple mosaic powder samples and to mosaic powder as substrate interdigitated structure sample.