can be calculated by the finite element method of stress magnitude different speeds to simulate the failure process and improve the design.
2013年9月8日星期日
The new ultra-high-precision wafer planarization process has been a lot of research
Silicon chip is an integrated circuit (IC) manufacturing process, the most common substrate material, the surface quality and the silicon sub-surface damage directly affects the performance of the device, the yield and lifetime. As the wafer size increases, the new ultra-high-
Diamond blade wafer planarization process has been a lot of research, which, using fixed abrasive silicon ultra-precision grinding technology is
synthetic diamond replacing the traditional grinding technology to become light silicon back thinned wafer sheet and the mainstream graphics
abrasive grinding . However, the current silicon ultra-precision grinding wheel is generally used in micronized diamond grinding wheel, diamond grinding wheel, the wafer surface will inevitably produce grinding damage, but also the need for further chemical mechanical polishing. Therefore, it is necessary to study and explore new principles using the new wheel silicon processing methods to obtain super smooth surface grinding low damage.
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