can be calculated by the finite element method of stress magnitude different speeds to simulate the failure process and improve the design.
2013年9月8日星期日
Has sufficient strength to ensure wafer, a corresponding increase in the thickness of the wafer
As wafer diameter increases, in order to ensure sufficient strength of silicon, a corresponding increase in the thickness of the wafer; the contrary, in order to meet the needs of advanced IC chip packaging technology, thinner thickness of the chip. These changes make the wafer planarization process faces many outstanding technical issues: IC
polycrystalline diamond , for wafer processing accuracy and surface quality high demands; wafer diameter increases, the process is easy to warpage, machined surface type easy to ensure accuracy; silicon thickness increases and chip
Diamond blade , so that the back of wafer thinning process increases the amount of material removal, improve processing efficiency become a serious problem. Therefore, the use of ultra-precision consolidation abrasive grinding technology is replacing
Polycrystalline diamond silicon ultra-precision grinding technology become planarization processing technologies mainstream of development, one of the most representative of the silicon self-rotating grinding method is considered to be large planarized wafer size ideal for processing grinding method.
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